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  • 专利说明
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    • 专利摘要:

    公开号:NL1025119A1
    申请号:NL1025119
    申请日:2003-12-23
    公开日:2004-09-13
    发明作者:Jae-Yong Park；Kwang-Jo Hwang
    申请人:Lg Philips Lcd Co；
    IPC主号:
    专利说明:

    Brief indication: Organic electroluminescent device with two panels and method for the manufacture thereof.
    The present invention invokes the priority of Korean Patent Application No. 2002-84579 filed in Korea on December 26, 2002, the contents of which are incorporated herein.
    The present invention relates to an organic electroluminescent device and more particularly to an organic electroluminescent device of the type with two panels which requires a reduced number of masks in the process of its manufacture, and to a method of manufacturing the same .
    Of the flat panel image display devices (FPDs), the organic electroluminescent (EL) devices have been of particular interest in research and development because they are light-emitting image display devices that allow a large viewing angle and also exhibit the desired contrast ratio compared to with the liquid crystal display devices (LCD). Since no background lighting is required with such organic EL devices, their dimensions are small and the weight is low compared to other types of image display devices. The organic EL image display devices have other desirable characteristics such as low current consumption, superior brightness and a fast response time. Only a very weak direct voltage is required when driving the organic EL devices. Furthermore, a very fast response can be obtained. It is clear that, since organic EL devices are entirely made of a solid, this is in contrast to LCD devices, they are sufficiently strong to withstand external shocks and also have a larger operating temperature range. Because the manufacture of an organic EL device is a relatively simple process with few process steps, an organic EL device can be manufactured much cheaper than a comparable LCD device or plasma-operated image display panels (PDPs). Only an installation for precipitation and encapsulation are required for the production of the organic EL devices.
    In an organic EL with active matrix device, a voltage applied to the pixel and a charge for maintaining the voltage is stored in a storage capacitor. This allows the device to be driven with a constant voltage until the voltage of the next image frame is applied, and this independently of the number of scanning lines. The result is that with a low applied current an equivalent brightness is obtained, an organic EL device with active matrix with a low current consumption, a high resolution and a large surface can be manufactured.
    FIG. 1 is the equivalent scheme of the basic pixel structure of an organic active-electroluminescent device according to the prior art. 1, a scanning line 2 is arranged extending in a first direction, and a signal line 4 and a feeding line 5 are arranged in a second direction perpendicular to this first direction, thus determining a pixel area "P". The signal line 4 and the power supply line 5 are spaced apart. A switching thin-film transistor (TFT) "Ts", an addressing element, is connected to the scanning line 2 with the signal line 4, and a storage capacitor "Csr" is connected to the switching TFT "Ts" and to the feeding line 6. A driving TFT "Τ0", a current source element, is connected to the storage capacitor "CSt" and to the power supply line 6, and an organic electroluminescent (EL) diode Del "is connected to the driving TFT" TD ". The organic EL diode "Del" has an organic EL layer (not shown) between an anode and a cathode. The switching TFT "Ts" controls the voltage applied to the driving TFT "TD" and the storage capacitor "Cst" stores a charge for maintaining the voltage applied to the driving TFT "TD".
    When a scanning signal on the scanning line 2 is applied to the switching gate electrode of the switching TFT "Ts", the switching TFT "Ts" is switched ON, and an image signal from the signal line 4 is applied to the driving gate electrode of the driving TFT "TD" and the storage capacitor "Cst" via the switching element "Ts". The result is that the driving TFT "TD" is turned ON. When the driving TFT "TD" is conductive, current on the power supply line 6 is supplied to the organic EL
    diode "Del" via the driving TFT "TD". The result is that light is emitted. The current density through the driving element "TD" is modulated by the image signal applied to the driving gate electrode. The result is that the organic electroluminescent diode "DE1" can display images over a large number of levels in a gray scale. Because the voltage of the image signal stored in the storage capacitor "Csr" is applied to the driving gate electrode, the current density flowing in the organic electroluminescent diode "DE1" can be maintained at a uniform level until the next image signal is applied even when the next image signal is applied switching element HTS "is switched off.
    FIG. 2 is a schematic plan view of an organic electroluminescent device according to the prior art.
    According to FIG. 2, a gate line 37 crosses a data line 31 and a power supply line 42 that are spaced apart. A pixel area "P" is determined between the gate line 37, the data line 51 and the power line 42. A switching thin-film transistor (TFT) "T8" is arranged near the intersection of the gate line 37 and the data line 51. A driving TFT " TD "is connected to the switching TFT" Ts "and to the power supply line 42. A storage capacitor" Csr "uses a portion of the power supply line 42 as the first capacitor electrode and an active pattern 34 extending from a switching active layer 31 of the switching TFT "Ts" as a second capacitor electrode. A first electrode 58 is connected to the driving TFT "TD" and an organic electroluminescent (EL) layer, which is not shown, and a second electrode, also not shown, is successively formed on the first electrode 58. The first and the second electrodes and the organic EL layer sandwiched therebetween forms an organic EL diode "Da".
    FIG. 3 is a schematic cross-section along the line "III-III" in FIG. 2. According to FIG. 3, a driving thin-film transistor (TFT) "TD" includes an active layer 32, a gate electrode 38, and source and drain electrodes 50 and 52, respectively. formed on a substrate 1. The source electrode 50 is connected to the supply line 42 and the drain electrode 52 is connected to a first electrode 58. An active cartridge 34 made of the same material as that of the active layer 32 is below the supply line 42 formed with the insertion of an insulating layer 40. The active pattern 34 and the power supply line 42 form a storage capacitor "Cst". An organic electroluminescent (EL) layer 64 and a second electrode 66 are successively formed on the first electrode 58 and form an organic EL diode "Dq,".
    As insulating layers, a first insulating layer 30, for example a buffer layer, is formed between the substrate 1 and the active layer 32. A second insulating layer 36 is formed between the active layer 32 and the gate electrode 38. A third insulating layer 40 is formed between the active pattern 34 and the power line 42. A fourth insulating layer 44 is formed between the power line 42 and the source electrode 50. A fifth insulating layer 54 is formed between the drain electrode 52 and the first electrode 58 A sixth insulating layer 60 is formed between the first electrode 58 and the organic layer 64.
    The third through sixth insulating layers 40, 44, 54 and 60 have contact holes that allow connections to be formed.
    FIG. 4A to 41 are schematic cross-sections explaining steps of the process of manufacturing an organic electroluminescent device according to the prior art. According to Fig. 4A, a first insulating layer 30, for example a buffer layer, is formed on the substrate 1 by depositing a first insulating material. After forming a polycrystalline silicon layer (not shown) on the first insulating layer 30, an active layer 32 and an active pattern 34 are formed using a first masking process. According to Fig. 4B, after successively depositing a second insulating material and a first metallic material over the entire surface of the substrate 1, a second insulating layer 36, such as a gate insulating layer and a gate electrode 38 are formed using a second process of to mask. According to FIG. 4C, a third insulating layer 40 is formed on the gate electrode 38 by depositing a third insulating material. After depositing a second metallic material on the third insulating layer 40, the feeding line 42 is formed over the active pattern 34 using a third masking process.
    According to Fig. 4D, after depositing a fourth insulating material on the feeding line 42, a fourth insulating layer 44 with first through third contact holes 46a, 46b and 46c is formed using a fourth masking process. The active layer 32 can be divided into a channel region 32a and source and drain regions 32b and 32c by a subsequent doping process. The first and second contact holes 46a and 46b, respectively, provide access to the source and drain regions 32b and 32c, respectively. The third contact hole 48 provides access to the feed line 42. The source and drain regions 32b and 32c are doped with contaminants.
    According to FIG. 4E, after depositing a third metallic material on the fourth insulating layer 44, the source and drain electrodes 50 and 52 are formed using a fifth masking process. The source electrode 50 is connected to the power supply line 42 via the third contact hole 48 (see Fig. 4D) and to the source region 32b via the first contact hole 46a (see Fig. 4D). The drain electrode 52 is connected to the drain region 32c via the second contact hole 46b (see Fig. 4D). The active layer 32, the gate electrode 38, and the source and drain electrodes n 50 and 52 form a driving thin-film transistor (TFT) "TD". The supply line 42 and the active pattern 34 are connected to the source electrode 50 and to an active layer of a switching TFT (not shown). In addition, the power supply line 42 and the active cartridge 34, with the third insulating layer 40 between them, form a storage capacitor "Cst".
    According to Fig. 4F, after depositing a fifth insulating material on the source and drain electrodes 50 and 52, a fifth insulating layer 54 with a fourth contact hole 56 is formed using a sixth masking process. The fourth contact hole 56 provides access to the drain electrode 52.
    According to FIG. 4G, after depositing a fourth metallic material on the fifth insulating layer 54, a first electrode 58 is formed using a seventh masking process. The first electrode 58 is connected to the drain electrode 52 via the fourth contact hole 56 (see Fig. 4F).
    According to FIG. 4H, after depositing a sixth insulating material on the first electrode 58, a sixth insulating layer 60 with an open portion 62 is formed using an eighth masking process. The open portion 62 provides access to the first electrode 58. The sixth insulating layer 60 protects the driving TFT "TD" from moisture and contamination.
    Referring to Fig. 41, an organic electroluminescent (EL) layer 64 and a second electrode 66 of a fifth metallic material are successively formed on the sixth insulating layer 60. The organic EL layer 64 is in contact with the first electrode 58. via the open portion 62 (see Fig. 4H). The second electrode 66 is formed on an entire surface portion of the substrate 1. The first electrode 58 may be referred to as an anode. The fifth metallic material can be selected from a material that is highly reflective and has a low working function because the second electrode 66 must reflect the light emitted from the organic EL layer 64 and deliver electrons to the organic EL layer 64.
    FIG. 5 is a schematic cross-sectional view of an organic electroluminescent device according to the prior art. According to FIG. 5, first and second substrates 70 and 90, with inner surfaces facing each other and spaced apart, have a number of pixel regions "P". An array layer 80 with a driving thin-film transistor (TFT) "TD" in each pixel region "P" is formed on an inner surface of the first substrate 70. A first electrode 72 connected to the driving TFT "TD" is in each pixel region " P "formed on the array layer 80. Red, green and blue organic electroluminescent EL layers 74 are alternately formed on the first electrode 72. A second electrode 76 is formed on the organic EL layer 74. The first and second electrodes 72 and 76, and the organic EL layer 74 therebetween forms an organic EL diode "DE1" The organic EL device is of the soil type where light is emitted from the organic EL layer 74 through the first electrode 72 and emerging from the substrate 70.
    The second substrate 90 is used as an encapsulating substrate. This second substrate 90 has a concave portion 92 in the center and this concave portion 92 is filled with a moisture-absorbing drying agent 94 that absorbs moisture and oxygen to protect the organic diode "Del". The inner surface of the second substrate 90 is spaced apart from the second electrode 76. The first and second substrates 70 and 90 are connected to each other by means of a sealing means 85 along the peripheral edge of the first and second substrates.
    In an organic ELD according to the state of the art, an TFT array portions are an organic electroluminescent (EL) diode formed over a first substrate, and an additional second substrate, to encapsulate the whole, is connected to the first substrate. . However, when the TFT array portion and the organic EL diode are formed on one substrate in this manner, the production yield of the organic ELD is determined by the product of the yield of the TFT and that of the organic EL diodes. Because the production yield of the organic EL diodes is relatively low, the total production yield of the total ELD is limited by that of the organic EL diodes. Even when a TFT is properly manufactured, an organic ELD with a thin film of about 1000 Å can be considered to be merely due to defects in an organic emitting layer. This results in loss of material and in higher production costs.
    In general, organic ELDs can be subdivided into the bottom-emission type and the top-emission type, depending on the direction in which the light used to display images via the organic ELDs exits. Organic ELDs of the soil emission type have the advantages that they are stably encapsulated and that the production process is flexible. However, the organic ELDs of the soil emission type are ineffective for devices for which a high resolution is required because they exhibit a low aperture ratio. Organic top-class ELDs, on the other hand, have a higher expected service life because they are easier to design and have a high aperture ratio. In top-type organic ELDs, the cathode is usually formed on an organic emitting layer. The result is that the light transmittance and the optical efficiency of the organic ELDs of the top emission type deteriorate because only a limited number of materials can be used for this. When a thin film type passivation layer is formed to prevent light transmittance from falling back, such a thin film type passivation layer may fail to prevent ambient air infiltration into the device.
    The present invention is therefore directed to an organic electroluraining image display device and a method of manufacturing it that substantially overcomes one or more of the problems resulting from the limitations and disadvantages of the prior art.
    An object of the present invention is to provide an organic electroluminescent device with an improved production yield, a high resolution and a high aperture ratio.
    Additional features and advantages of the invention are given in the description that follows, and will be apparent from this description or may be experienced by practicing the invention. The objects and other advantages of the invention will be realized and achieved with the structure as specifically indicated in the description and the claims and shown in the drawing.
    In order to achieve these and other advantages and according to the purpose of the invention, as embodied and broadly described herein, an organic electroluminescent device comprises first and second substrates, facing each other and spaced apart; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line that crosses the gate line; an ohmic data contact line below the data line, the ohmic data contact line having the same shape as the data line; a feeding line parallel to, or substantially parallel to, and spaced from the data line, said feeding line comprising the same material as the data line; a switching thin film transistor connected to the gate line and the data line, wherein the switching thin film transistor the semiconductor layer as an active switching layer; a driving thin-film transistor connected to the switching thin-film transistor and the power supply line, the driving thin-film transistor using the semiconductor layer as an active driving layer; a connecting pattern connected to the driving thin film transistor, said connecting pattern comprising conductive polymer material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, which second electrode is in contact with the connecting pattern.
    In another aspect, a method for manufacturing an organic electroluminescent device comprises the steps of forming a driving gate electrode, a gate line, and a feeding line on a first substrate using a first masking process; forming a first insulating layer and a semiconductor layer successively on the driving gate electrode, the gate line and the power line; sequentially forming a first layer of silicon and a second layer of metal on the semiconductor layer; sequentially patterning the first and second layers using a second masking process to form a driving ohmic contact layer, an ohmic data contact layer, driving source and drain electrodes, and a data line, the driving ohmic contact layer being formed under the driving source and drain electrodes, and the ohmic data contact layer is formed under the data line; forming a second insulating layer with a source contact hole and a drain contact hole on the driving source and drain electrodes and the data line using a third masking process, the source contact hole releasing the driving source electrode and the drain contact hole releasing the driving drain electrode; forming a connecting pattern and a connecting electrode from conductive polymeric material on the second insulating layer, the connecting pattern being connected to the driving drain electrode via the drain contact hole and the connecting electrode is connected to the driving source electrode via the source contact hole; forming a first electrode on a second substrate; forming an organic electroluminescent layer on the first electrode; forming a second electrode on the organic electroluminescent layer; and connecting the first and second substrates together such that the second electrode is in contact with the connecting pattern.
    It is to be understood that both the foregoing general description and the following detailed description are given by way of example and explanation and are intended solely for a further explanation of the invention as embodied in the claims.
    The accompanying drawing, which is included for a further understanding of the invention and which is incorporated in part of the description, shows embodiments of the invention and, in combination with the description, serves to illustrate the principles of the invention. In the drawing:
    Fig. 1 shows an equivalent scheme and shows the basic pixel structure of an active matrix electroluminescent device according to the prior art;
    Fig. 2 is a schematic plan view of an organic electroluminescent device according to the prior art;
    FIG. 3 is a cross-sectional view along the line "III-III" in FIG.
    2;
    4A to 41 are schematic cross-sections for explaining a process of manufacturing an organic electroluminescent device according to the prior art;
    Fig. 5 is a schematic cross-sectional view of an organic electroluminescent device according to the prior art;
    Fig. 6 is a schematic cross-sectional view of an organic electroluminescent device according to an embodiment of the present invention;
    Fig. 7 is a schematic plan view of an organic electroluminescent device according to an embodiment of the present invention;
    8A to 8D are schematic cross-sections illustrating a process of manufacturing a driving thin-film transistor for an organic electroluminescent device according to an embodiment of the present invention;
    9A to 9D are schematic cross-sections illustrating the process of manufacturing a data slice, a gate slice and a feeding slice for an organic electroluminescent device according to an embodiment of the present invention.
    Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are indicated in the accompanying drawings.
    FIG. 6 is a schematic cross-sectional view of an organic electroluminescent device according to an embodiment of the present invention. According to FIG. 6, first and second substrates 110 and 150, which have inner surfaces facing each other and spaced apart, have a number of pixel regions "P". An array layer 140 with a driving thin-film transistor (TFT) "TD" in each pixel region "P" is formed on an inner surface of the first substrate 110. A connecting pattern 142 connected to the driving TFT "TD" is formed on the array layer 140 "P" in each pixel area. The connecting pattern 142 can be made of a conductive material or of several layers, including an insulating material, with a sufficient thickness for the connection. An additional connecting electrode can be used to connect the connecting pattern 142 and the driving TFT "TD". The driving TFT "TD" includes a gate electrode 112, an active layer 114, and source and drain electrodes 116 and 118. The connecting pattern 142 is connected to the drain electrode 118.
    A first electrode 152 is formed on an inner surface of the second substrate 150. An organic electroluminescent (EL) layer 160 with red, green, and blue organic-emitting layers 156a, 156b, and 156c arranged interchangeably in each pixel region "P" is formed on the first electrode 152. A second electrode 162 is formed on the organic EL layer 160 in each pixel region "P". The organic EL layer 160 can be formed from a single layer or from a multiple layer. In the case of a multiple layer, the organic EL layer may comprise a first carrier transport layer 154 on the first electrode 152, one of the red, green and blue emitting layers 156a, 156b and 156c on the first carrier transport layer 154 and a second carrier transporting layer 158 on each of the emitting layers 156a, 156b and 156c. For example, when the first and second electrodes 152 and 154 are an anode and a cathode, respectively, the first carrier-transporting layer 154 corresponds to a hole-injecting layer and with a hole-transporting layer, and the second carrier-transporting layer 158 corresponds to an electron-transporting layer and an electron-injecting layer. The first and second electrodes 152 and 162, and the organic EL layer 160, interposed therebetween, form an organic electroluminescent diode "Da".
    The first and second substrates 110 and 150 are attached to each other by means of a sealing means 170, namely along the peripheral edge thereof. The upper surface of the connecting pattern 142 comes into contact with the bottom surface of the second electrode 162, so that the current flows through the driving TFT "TD" to the second electrode 162 via the connecting pattern 142.
    An organic EL device according to this embodiment of the present invention is one of the type consisting of two panels in which an array layer 140 and an organic electroluminescent diode "Del" are formed on the respective substrates and in which a connecting pattern 142 the array layer and the organic electroluminescent diode "Del". Various modifications and variations can occur in a structure of the TFT and in the manner of connecting an array layer and the organic EL diode. Furthermore, since the organic EL device of the present invention is of the top-emission type, a thin film transistor can easily be used, and a high resolution and a high aperture ratio can be obtained.
    FIG. 7 is a schematic plan view of an organic electroluminescent device according to an embodiment of the present invention. According to FIG. 7, a gate line 212 is formed in a first direction. A data line 240 and a feeding line 220, spaced apart, are formed in a second direction, transverse to the first direction. A switching thin film transistor (TFT) "Ts" includes a switching gate electrode 214, a switching active layer 228 and switching source and drain electrodes 232 and 236 and is formed at the intersection of the gate line 212 with the data line 240. The switching gate electrode 214 is connected to the gate line 212 and the switching source electrode 232 is connected to the data line 240. The switching source and drain electrodes 232 and 236 are spaced apart. The switching active layer 228 has a shape corresponding to that of the switching source and drain electrodes 232 and 236. The supply line 220 can be made of the same material as that of the switching gate line 212 using the same manufacturing process.
    A driving TFT "TD" has a driving gate electrode 216, a driving active layer 230, and driving source and drain electrodes 234 and 238. The driving gate electrode 216 is connected to the switching drain electrode 236 and may be made of the same material as the gate line 212 using the same manufacturing process. The driving source and drain electrodes 234 and 238 are spaced apart and may be made of the same material as that of the data line 240 using the same manufacturing process. The driving active layer 230 is below the driving source and drain electrodes 234 and 238. A feeding electrode 262 is connected to the driving source electrode 234 via a source contact hole 248 and to the feeding line 220 via a feed contact hole 246.
    A connecting pattern 260 is formed in a connection region C near the driving TFT "TD" and is connected to the driving drain electrode 238. The connecting pattern 260 may be made of the same material as that of the feeding electrode 262 using the same manufacturing process. For the connecting pattern 260, for example, use can be made of a conductive polymer material. The connecting region "C" corresponds to a second (not shown) electrode of an organic EL diode. A capacitor electrode 244 extending from the switching drain electrode 236 overlaps the supply line 220 to form a "Cst" storage capacitor.
    A data slice 242, and a feeding slice 222 are formed at one end of the data line 240, the gate line 212, and the feeding line 220, respectively. A data slice connection 264, a gate slice connection 266 and a feeding slice connection 268 are formed over the data slice 242, the gate slice 218, and the feeding slice 222, respectively.
    The data slice terminal 264, the gate slice terminal 266 and the terminal 268 of the feed slice may be made of the same material as that of the connecting pattern 260 using the same manufacturing process.
    A semiconductor layer (not shown) with a layer of doped amorphous silicon 224b is formed under both the data line 240, the data wafer 242 and the capacitor electrode 244. The layer 224b of doped amorphous silicon can be made of the same material as that of a ( ohmic contact layer (not shown) of the active switching layer 228 and the active driving layer 230. Because the gate line 212 and the feeding line 220 are formed simultaneously using the same manufacturing process, a first coupling line 241a is used as a connection of the feeding line 220 near the intersection of the gate line 212 and the power line 220 to prevent an electrical short circuit between the gate line 212 and the power line 220. The first linking line 241 can be made of the same material as that of the data line 240 using the same manufacturing process. Second coupling lines 241b are formed at both ends of the first coupling line 241a and this first coupling line 241a is connected via the second coupling lines 241b to the feeding line 220. The second coupling lines 241b may be made of the same material as that of the connecting pattern 260 using the same manufacturing process. In another embodiment, only the second coupling line 241b can be used for the connection of the supply line 220 over the gate line 212. Because different signals are applied to the data slice 242 and the feeding slice 222, the data slice 242 and the feeding slice 222 can be arranged at opposite ends of a first substrate.
    FIG. 8A to 8D are schematic cross-sections showing the manufacturing process of driving thin-film transistor for an organic electroluminescent device according to an embodiment of the present invention, and FIGS. 9A to 9D are schematic cross-sections showing the manufacturing process of a data slice, a gate slice and a feeding slice for an organic electroluminescent device according to an embodiment of the present invention. FIG. 8A to 8D are images along the line "VIII-VIII" in Fig. 7 and Figs. 9A to 9D are images along the line "IX-IX" in Fig. 7. A masking process is performed as a photolithographic process including a step of patterning using a photoresist (PR), with exposure and development, and a step of etching using this PR pattern as a mask.
    As Figs. 8A and 9A show, a driving gate electrode 216, a gate slice 218, and a feeding slice 222 of a first metallic material are formed on a first substrate 210 using a first masking process. Although not shown in FIG.
    8A and 9A, a feeding line connected to the feeding slice 222 is formed at the same time. The first metallic material has a low resistivity. For example, aluminum (Al) or aluminum (Al) alloy can be used as the first metallic material.
    8B and 9B, a first insulating layer (a gate insulating layer) 223 of a first insulating material and a layer 224a of amorphous silicon (α-Si: H) are successively formed on the driving gate electrode 216, the gate slice 218 and the feeding slice 222. After successively depositing doped silicon material and the second metallic material on the amorphous silicon layer 224a, using a second masking process, an ohmic contact layer 230b, source and drain electrodes 234 and 238, and a data slice 242. The amorphous silicon layer 224a has an active portion 230a corresponding to the driving gate electrode 216. The active portion 230a of the amorphous silicon layer 224a and the ohmic contact layer 230b form an active driving layer 230. The source and drain electrodes 234 and 238 are spaced apart and a free active portion 230a becomes a channel region "ch". The data slice 242 is formed in a data slice area MD ". A data line (not shown) is formed simultaneously with the data slice 242 and the data slice area" D "is at one end of the data line. The data slice 242 and the feeding slice 222 can be formed at the opposite ends of the first substrate 210.
    The driving gate electrode 216, the driving active layer 230, and the source and drain electrodes 234 and 238 form a driving thin-film transistor (TFT) "TD". A doped amorphous silicon layer 224b is formed under the slice 242. The doped amorphous silicon layer 224b can be made of the same material as that of the ohmic contact layer 230b of the driving active layer 230 and has a shape corresponding to that of the doped data slice 242. The first insulating material is a silicon-containing insulating material, such as silicon nitride (SiNx) or silicon oxide (SiO 2). The second metallic material is a chemically resistant material such as molybdenum (Mo), titanium (Ti), chromium (Cr) and tungsten (W).
    As Figs. 8C and 9C show, after depositing a second insulating material on the driving TFT "TD", the data slice 242, the gate slice 218 and the feeding slice 222 become a second insulating layer (a passivation layer) 258 with the source and drain contact holes 248 and 250, a data slice contact hole 252, a gate slice contact hole 254, and a feed slice contact hole 256 formed by a third masking process. The source and drain contact holes 248 and 250 provide access to the source and drain electrodes 234 and 238 respectively. 222. The gate wafer contact hole 254 and the feed hole contact hole 256 are formed by the first insulating layer 223, the amorphous silicon layer 224a and the second insulating layer 258. The drain contact hole 250 is provided in a connecting region "C" (see FIG. 7) corresponding to the second electrode of an organic electroluminescent diode.
    8D and 9D, after depositing a conductive polymeric material on the second insulating layer 258, a conductive pattern 260, a feeding electrode 262, a data wafer terminal 264, a gate wafer terminal 266 and a feed wafer terminal 268 are formed, and using a fourth masking process. The conductive pattern 260 is connected to the drain electrode 238 via the drain contact hole 250 and the power electrode 262 is connected to the source electrode 234 via the source contact hole 248. The data slice connection 264 is connected to the data slice through the data slice contact hole 252, the gate slice connection 266 is connected to the gate slice 218 through the gate slice contact hole 254 and the feed slice connection 268 is connected to the feed slice 222 through the contact hole 256 for the feed slice.
    An organic electroluminescent device according to the present invention has some advantages. First of all, since an inverted offset thin film transistor of amorphous silicon is used, the organic ELD can be made using a process where low temperatures prevail. Secondly, since the number of masking processes can be reduced even when an additional conductive pattern is added, the production yield is effectively improved because the process is simplified. Thirdly, since array patterns and an organic EL diode are formed on the respective substrates, the production yield and production efficiency are improved, while the life of an organic EL device is extended. Fourth, since the ELD is of the top emission type, a thin film transistor can be easily designed and a resolution at a high aperture ratio can be obtained independently of the lower array patterns.
    It will be appreciated by those skilled in the art that various modifications and variations can be made to the organic electroluminescent device and to the method of manufacturing it as proposed by the present invention without departing from the scope or spirit of the invention. The present invention is intended to cover all modifications and variations of this invention when they fall within the scope of the appended claims and their equivalents.
    权利要求:
    Claims (25)
    [1]
    An organic electroluminescent device, comprising: first and second substrates, facing each other and spaced apart; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer overlying a surface of the first substrate; a data line that crosses the gate line; an ohmic data contact line below the data line, the ohmic data contact line having the same shape as the data line; a feeding line parallel to, or substantially parallel to, and spaced from, the data line, said feeding line comprising the same material as the data line; a switching thin film transistor connected to the gate line and the data line, wherein the switching thin film transistor the semiconductor layer as an active switching layer; a driving thin-film transistor connected to the switching thin-film transistor and the power supply line, the driving thin-film transistor using the semiconductor layer as an active driving layer; a connecting pattern connected to the driving thin film transistor, said connecting pattern comprising conductive polymer material; a first electrode on an inner surface of the second substrate; an organic electroluminescent layer on the first electrode; and a second electrode on the organic electroluminescent layer, which second electrode is in contact with the connecting pattern.
    [2]
    The device of claim 1, wherein the data line and the ohmic data contact layer are sequentially patterned in a single photolithographic process.
    [3]
    The device of claim 1, further comprising a first coupling line near an intersection of a gate line and the feeding line, the first coupling line comprising the same material as the conductive pattern.
    [4]
    The device of claim 1, further comprising first and second linking lines near an intersection of the data line and the feeding line, wherein the first linking line comprises the same material as the connecting pattern and the second linking line comprises the same material as the data line, wherein the second coupling line crosses the gate line and the first coupling line is arranged at both ends of the second coupling line.
    [5]
    The apparatus of claim 1, further comprising a gate slice at one end of the gate line, a data slice at one end of the data line, and a feeding slice at one end of the feeding line.
    [6]
    The device of claim 5, wherein the switching thin film transistor comprises a switching gate electrode connected to the gate line, the switching active layer over the switching gate electrode, a switching ohmic contact layer on the switching active layer and switching source and drain electrodes on the switching ohmic contact layer.
    [7]
    The device of claim 6, wherein the driving thin film transistor comprises a driving gate electrode connected to the switching drain electrode, the driving active layer over the driving gate electrode, a driving ohmic contact layer on the driving active layer and driving source and drain electrodes on the driving ohmic contact layer.
    [8]
    The device of claim 7, further comprising a gate insulating layer between the driving gate electrode and the driving active layer and a passivation layer on the driving thin-film transistor, the passivation layer comprising a source contact hole releasing the driving source electrode, a drain contact hole that controls the driving source releases a drain electrode, a gate slice contact hole that releases the gate slice, a data slice contact hole that releases the data slice, and a feed slice contact hole that releases the feeding slice.
    [9]
    The device of claim 8, wherein the passivation layer comprises the gate slab contact hole and the feed slab contact hole through the semiconductor layer and the gate insulating layer.
    [10]
    The apparatus according to claim 9, further comprising a gate slab connection on the passivation layer, wherein the gate slab connection is connected to the gate slab via the gate slab contact hole and the feed slab connection is connected to the feeding slab via the feed slab contact hole, and wherein the gate slab locks and the feed-stick connection comprise the same material as the connecting pattern.
    [11]
    The device of claim 8, further comprising a connecting electrode, with the driving source electrode connected through the source contact hole and connected to the power supply line.
    [12]
    The device of claim 1, wherein the semiconductor layer is formed from amorphous silicon.
    [13]
    The device of claim 1, wherein the ohmic data contact layer is formed from doped amorphous silicon.
    [14]
    The device of claim 6, wherein the ohmic switching contact layer is formed from doped amorphous silicon.
    [15]
    The device of claim 7, wherein the driving ohmic contact layer is formed from doped amorphous silicon.
    [16]
    A method for manufacturing an organic electroluminescent device, comprising the steps of: forming a driving gate electrode, a gate line, and a feeding line on a first substrate using a first masking process; forming a first insulating layer and a semiconductor layer successively on the driving gate electrode, the gate line and the power line; sequentially forming a first layer of silicon and a second layer of metal on the semiconductor layer; sequentially patterning the first and second layers using a second masking process to form a driving ohmic contact layer, an ohmic data contact layer, driving source and drain electrodes, and a data line, the driving ohmic contact layer formed under the driving source and drain electrodes, and the ohmic data contact layer is formed below the data line; forming a second insulating layer with a source contact hole and a drain contact hole on the driving source and drain electrodes and the data line using a third masking process, the source contact hole releasing the driving source electrode and the drain contact hole releasing the driving drain electrode; forming a connecting pattern and a connecting electrode from conductive polymeric material on the second insulating layer, the connecting pattern being connected to the driving drain electrode via the drain contact hole and the connecting electrode is connected to the driving source electrode via the source contact hole; forming a first electrode on a second substrate; forming an organic electroluminescent layer on the first electrode; forming a second electrode on the organic electroluminescent layer; and connecting the first and second substrates together such that the second electrode is in contact with the connecting pattern.
    [17]
    The method of claim 16, further comprising the steps of forming a first linking line at an intersection of the gate line and the feeding line, wherein the first linking line is formed simultaneously with the connecting pattern.
    [18]
    The method of claim 16, further comprising forming first and second linking lines at an intersection of the gate line and the feeding line, the first linking line being formed simultaneously with the connecting pattern, and the second linking line simultaneously with the data line is formed.
    [19]
    The method of claim 16, further comprising forming a switching thin film transistor connected to the gate line and the lead.
    [20]
    The method of claim 16, further comprising the steps of: forming a gate slice and a feeding slice on the first substrate, using the first masking process; forming a data slice using the second masking process; and forming a gate slab contact hole, a data slab contact hole i and a feeding slab contact hole in the second insulating layer using the third masking process, wherein the gate slab contact hole releases the gate slab, the data slab contact hole releases the data slab and the feeding slab contact hole releases the feeding slab; and forming a gate slab terminal, a data slab terminal and a feeding slab terminal of conductive polymeric material on the second semiconductor layer, the gate slab terminal being connected to the gate slab via the gate slab contact hole, the data slab terminal connected to the data slab via the data slab contact hole and the feed slice connection is connected to the feed slice through the feed slice contact hole.
    [21]
    The method of claim 20, wherein the second insulating layer comprises the gate wafer contact hole and the feed wafer contact hole through the semiconductor layer and the first insulating layer.
    [22]
    The method of claim 16, wherein the semiconductor layer is formed from amorphous silicon.
    [23]
    The method of claim 16, wherein the first silicon layer is formed from doped amorphous silicon.
    [24]
    The method of claim 16, wherein the driving ohmic contact layer is formed from doped amorphous silicon.
    [25]
    The method of claim 16, wherein the ohmic data contact layer is formed from doped amorphous silicon.
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    同族专利:
    公开号 | 公开日
    JP4785809B2|2011-10-05|
    JP2007329138A|2007-12-20|
    FR2849959A1|2004-07-16|
    US20040129936A1|2004-07-08|
    US6984847B2|2006-01-10|
    KR100497096B1|2005-06-28|
    DE10361006A1|2004-08-26|
    KR20040058448A|2004-07-05|
    US20050269967A1|2005-12-08|
    US7232702B2|2007-06-19|
    CN100359710C|2008-01-02|
    GB2396736B|2005-05-25|
    JP4068554B2|2008-03-26|
    DE10361006A8|2005-04-07|
    GB0330030D0|2004-01-28|
    CN1516533A|2004-07-28|
    TW200418341A|2004-09-16|
    GB2396736A|2004-06-30|
    TWI298600B|2008-07-01|
    JP2004212992A|2004-07-29|
    DE10361006B4|2010-05-12|
    NL1025119C2|2007-05-30|
    FR2849959B1|2006-06-23|
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    法律状态:
    2004-11-01| AD1A| A request for search or an international type search has been filed|
    2007-04-02| RD2N| Patents in respect of which a decision has been taken or a report has been made (novelty report)|Effective date: 20070124 |
    2007-08-01| PD2B| A search report has been drawn up|
    2008-09-01| TD| Modifications of names of proprietors of patents|Owner name: LG DISPLAY CO., LTD. Effective date: 20080604 |
    2020-08-05| MM| Lapsed because of non-payment of the annual fee|Effective date: 20200101 |
    优先权:
    申请号 | 申请日 | 专利标题
    KR20020084579|2002-12-26|
    KR10-2002-0084579A|KR100497096B1|2002-12-26|2002-12-26|Array substrate for dual panel type electroluminescent device and method for fabricating the same|
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